A COMPREHENSIVE STUDY OF HOT-CARRIER INSTABILITY IN P-TYPE AND N-TYPEPOLY-SI GATED MOSFETS

A comprehensive comparison of hot-carrier instability between p- and n -type poly Si-gated MOSFET's is presented in this paper. The electron trapping and interface state generation in the 7 nm gate oxide of MOSF ET's are investigated using uniform hot-electron injection from a buri ed junction injector (BJI) and channel-hot-carrier stress. From BJI ex periments, electron trapping (instead of oxide trap generation) and in terface state generation are shown to be the major effects of hot-elec tron injection. Electron trapping and interface state generation are f ound to be similar in both p- and n-type poly-Si gated n-MOSFET's. The dependences of interface state generation by hot electrons on oxide v oltages and temperatures are observed to be similar between n- and p-t ype poly-Si gated MOSFET's. From the results of channel-hot-carrier st ress on surface-channel n- and p-channel MOSFET's, it was also found t hat the channel-hot-carrier instabilities of p- and n-type poly-Si gat ed MOSFET's are comparable.