THE ORIGINS OF THE PERFORMANCE DEGRADATION OF IMPLANTED P-CHANNEL MOSFET WITH WITHOUT RAPID THERMAL ANNEALING( POLYSILICON GATED P)

Some anomalous behaviors, such as punchthrough voltage reduction, leak age current increase, and g(m) instability have been found in BF2 impl anted p+-polysilicon P-MOSFET's. These effects are supposed due to B-i on penetration. To prevent the B-ion penetration, RTA has been used. E xperimental results show that RTA can improve the effect. But, the RTA process can also cause the generation of interface states, gate-induc ed-drain-leakage increase, and oxide quality degradation. All of the m echanisms of performance degradation are investigated and modeled in d etail.