Ss. Cohen et al., A FLAT-ALUMINUM BASED VOLTAGE-PROGRAMMABLE LINK FOR FIELD-PROGRAMMABLE DEVICES, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 721-725
A new metal-insulator-metal (MIM) structure has been developed for use
in field-programmable gate arrays (FPGA's) as a voltage-programmable
link (VPL). The present capacitor structure relies on aluminum metalli
zation; hence, it should be amenable to immediate application. The add
ition of minute amounts of titanium or molybdenum has been found to su
ppress hillock formation. The insulator, prepared by means of plasma-e
nhanced chemical vapor deposition (PECVD), comprises a sandwich of a n
early stoichiometric silicon dioxide interposed between two like layer
s of silicon-rich silicon nitride. This MIM structure has displayed ch
aracteristics desirable for use in the emerging FPGA technology includ
ing high density, very low on-resistance, reduced capacitance, low pro
gramming voltage, and the potential for further scaling to the sub-mic
ron regime.