A FLAT-ALUMINUM BASED VOLTAGE-PROGRAMMABLE LINK FOR FIELD-PROGRAMMABLE DEVICES

A new metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGA's) as a voltage-programmable link (VPL). The present capacitor structure relies on aluminum metalli zation; hence, it should be amenable to immediate application. The add ition of minute amounts of titanium or molybdenum has been found to su ppress hillock formation. The insulator, prepared by means of plasma-e nhanced chemical vapor deposition (PECVD), comprises a sandwich of a n early stoichiometric silicon dioxide interposed between two like layer s of silicon-rich silicon nitride. This MIM structure has displayed ch aracteristics desirable for use in the emerging FPGA technology includ ing high density, very low on-resistance, reduced capacitance, low pro gramming voltage, and the potential for further scaling to the sub-mic ron regime.