COMPARISON OF ULTRALOW SPECIFIC ON-RESISTANCE UMOSFET STRUCTURES - THE ACCUFET, EXTFET, INVFET, AND CONVENTIONAL UMOSFETS

Authors
SYAU TY VENKATRAMAN P BALIGA BJ
Citation
Ty. Syau et al., COMPARISON OF ULTRALOW SPECIFIC ON-RESISTANCE UMOSFET STRUCTURES - THE ACCUFET, EXTFET, INVFET, AND CONVENTIONAL UMOSFETS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 800-808
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
5
Year of publication
1994
Pages
800 - 808
Database
ISI
SICI code
0018-9383(1994)41:5<800:COUSOU>2.0.ZU;2-3
Abstract
Three new ultralow specific on-resistance, vertical channel, power UMO SFET structures, with a trench (UMOS) gate extending all the way betwe en N+ source and the N+ substrate (drain), are compared with the conve ntional UMOSFET structure. Specific on-resistances in the range of 100 -250 muOMEGAcm2 have been experimentally demonstrated for devices capa ble of supporting 25 V. This is due to current conduction via an accum ulation and/or inversion layer formed under gate bias along the trench gate surface, resulting in the lowest specific on-resistance ever rep orted.