GROWTH AND IN-SITU ELLIPSOMETRIC ANALYSIS OF SI1-XGEX ALLOYS DEPOSITED BY CHEMICAL BEAM EPITAXY

Growth of strained Si1-xGex alloys on Si (100) by chemical beam epitax y using silane and germane as gas precursors is reported. Selectivity on SiO2 patterned substrates, superlattices with sharp interfaces are easily achieved for x values varying between 0 and 25%. The incorporat ion rate of germanium and the growth kinetics are analyzed as a functi on of the germane gas flow and substrate temperature. The growth proce ss is controlled in situ using a multi-wavelength ellipsometer. An acc urate monitoring of the germanium content and thickness of multi-quant um well along with bulk structures can be obtained by this method. We show that a three-dimensional growth analysis is also worth considerat ion for structural characterization of the layer.