B AND ITS TEMPERATURE-DEPENDENCE ARE THE IMPORTANT CRITERIA OF THE RELIABILITY OF SEMICONDUCTOR-LASERS

Authors
SHI JW JIN ES MA J GAO DS
Citation
Jw. Shi et al., B AND ITS TEMPERATURE-DEPENDENCE ARE THE IMPORTANT CRITERIA OF THE RELIABILITY OF SEMICONDUCTOR-LASERS, Microelectronics and reliability, 34(8), 1994, pp. 1405-1408
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
34
Issue
8
Year of publication
1994
Pages
1405 - 1408
Database
ISI
SICI code
0026-2714(1994)34:8<1405:BAITAT>2.0.ZU;2-B
Abstract
From the results of electric derivative curves and electric ageing of 21 V-groove InGaAsP/InP semiconductor lasers, we show in this paper th at the intercept b of the idv/di is similar to i curves above threshol d at i = 0 and the change rate of b with temperature are the important criteria of the device's reliability.