STRUCTURAL-PROPERTIES OF PERFECT ZNTE EPILAYERS ON (001) GAAS SUBSTRATES

We report on molecular beam epitaxy and hot-wall beam epitaxy growth o f ZnTe epilayers on (001) GaAs substrates. The surface reconstruction of (001) ZnTe is measured by reflection high-energy electron diffracti on (RHEED). The RHEED pattern as a function of the beam equivalent pre ssure ratio P(Te)/P(Zn) and substrate temperature is studied. Mosaic s tructures of the ZnTe epilayers grown under optimized conditions are i nvestigated quantitatively by high resolution X-ray diffraction and ph otoluminescence. These data, which are related to the three-dimensiona l perfection of epilayers, are contrasted to RHEED measurements of the surface morphology.