GROWTH AND CHARACTERIZATION OF ELECTRODEPOSITED FILMS OF CADMIUM TELLURIDE ON SILICON

This work describes the growth and characterization of electrodeposite d films of the II-VI semiconductor CdTe directly on to p- and n-type s ilicon. In-situ ellipsometry has revealed the presence of a spontaneou sly deposited Te layer on illuminated p-type Si and on n-type Si. The growth of the spontaneous layer has been verified by the other techniq ues used to characterize the electrodeposited films, such as different ial scanning calorimetry, X-ray photo-electron spectroscopy, energy di spersive analysis by X-rays, Rutherford backscattering and X-ray diffr action. The subsequent growth of the CdTe layer on top of this is clos e to stoichiometric composition but the film does not appear to form a coherent layer.