GROWTH OF CDTE CDZNTE STRAINED-LAYER SINGLE QUANTUM-WELLS BY MODIFIEDHOT-WALL EPITAXY METHOD AND THEIR PROPERTIES/

Several CdTe/CdZnTe strained-layer single quantum well (SLSQW) structu res, with CdTe well width ranging from 15 to 240 angstrom, were grown on GaAs(100) substrates, by modified hot-wall epitaxy (HWE) method for the first time. Our HWE system is equiped with a gold tube radiation shield which is more effective in heat confinement and temperature sta bility than conventional metal tubes. Photoluminescence (PL) measureme nts of SLSQW showed that the sharp e1h1 excitonic transition peaks in the range of 1.597 to 1.624 eV shifted to the higher energy with decre asing well width. From the PL excitation (PLE) measurements of SLSQW, we obtained the n = 1, 2, 3 and n = 1, 2 excitonic transition peaks fo r the 240 and 120 angstrom CdTe well width SLSQW structures, respectiv ely. The excitonic transition energies were calculated considering str ain effects and this results were agreed well with experimental ones c onsidering the exciton binding energy. Moreover, the FWHMs of excitoni c transition peaks obtained from PL and PLE measurements were about 2 meV and Stokes shifts between PL and PLE spectra were about 1 meV. It indicates that the SLSQWs grown by HWE in this study have a high quali ty comparable to MBE-grown ones.