THICKNESS DEPENDENT PROPERTIES OF ZNSE ON (100) GAAS GROWN BY ATOMIC LAYER EPITAXY

ZnSe epilayers were grown on semi-insulating GaAs (100) substrates by ALE (atomic layer epitaxy) modified from CVD (chemical vapor depositio n). The optical properties of ZnSe films depending on thickness were s tudied through micro-Raman and PL (photoluminescence) spectroscopy. Th e critical thickness was determined to be about 0.1 mum by analyzing t he change in the peak shift of LO-phonon modes of ZnSe films. This is confirmed from the increase of the intensities of the deep center band in the PL spectra when the thickness exceeds 0.1 mum.