STRAIN RELIEF AND GROWTH MODES IN WURTZITE TYPE EPITAXIAL LAYERS OF CDSE AND CDS AND IN CDSE CDS SUPERLATTICES/

Authors
GRUN M HETTERICH M KLINGSHIRN C ROSENAUER A ZWECK J GEBHARDT W
Citation
M. Grun et al., STRAIN RELIEF AND GROWTH MODES IN WURTZITE TYPE EPITAXIAL LAYERS OF CDSE AND CDS AND IN CDSE CDS SUPERLATTICES/, Journal of crystal growth, 138(1-4), 1994, pp. 150-154
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
150 - 154
Database
ISI
SICI code
0022-0248(1994)138:1-4<150:SRAGMI>2.0.ZU;2-#
Abstract
The relaxation of the mismatch-induced strain in (0001) wurtzite type epilayers of CdSe and CdS and of related superlattices on GaAs(111) is discussed. For CdSe/GaAs(111), high-resolution electron microscopy sh ows that the misfit dislocations are 60-degrees dislocations, the glid e of which is limited to the plane parallel to the interface. The epil ayers are therefore free of in-grown threading arms. The thickness of that region in the layer, which is significantly strained, is found to be larger in case of a two-dimensional growth mode than in case of a three-dimensional one.