TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN ZNSE AND ROLE OF EXCITATIONTRANSFER

Citation
Gj. Yi et al., TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN ZNSE AND ROLE OF EXCITATIONTRANSFER, Journal of crystal growth, 138(1-4), 1994, pp. 208-212
Citations number
17
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
208 - 212
Database
ISI
SICI code
0022-0248(1994)138:1-4<208:TOLIZA>2.0.ZU;2-7
Abstract
Excitation transfer among localized states has often been neglected fo r semiconductor luminescence. We have recently shown that such transfe r is far more prevalent in the low temperature luminescence in ZnSe th an had been realized. In this work, we studied the temperature depende nce of the luminescence, and observed the phonon-assisted transfer bet ween two bound excitons at relatively high temperature. This observati on correlates with the result of a theoretical model consisting of a t wo-level system. Our results also show that excitation transfer may we ll be playing a role in the origin of the blue room temperature lumine scence in ZnSe.