COMPLEX-FORMATION IN IN-DOPED AND AG CU-DOPED CDTE/

Citation
M. Rub et al., COMPLEX-FORMATION IN IN-DOPED AND AG CU-DOPED CDTE/, Journal of crystal growth, 138(1-4), 1994, pp. 285-289
Citations number
12
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
285 - 289
Database
ISI
SICI code
0022-0248(1994)138:1-4<285:CIIAAC>2.0.ZU;2-U
Abstract
Interactions between In donors and Ag, Cu and acceptor-like native def ects have been studied in p- and n-type CdTe single crystals by pertur bed angular correlation (PAC) spectroscopy on In-111 probe atoms. Silv er diffusion into the p-type samples at room temperature results in th e formation of a distinct complex characterized by an interaction freq uency eQV(zz)/h = 60.1 MHz and an asymmetry parameter eta = 0.15. At r oom temperature the relative fraction of this complex increases within a few hours and decreases with a significantly longer time constant. After copper doping, a similar complex with 57.5 MHz and eta = 0.16 wa s observed which, however, did not show any decrease. The observed beh aviour is explained by fast diffusion of Ag (or Cu) via an interstitia l mechanism and the interaction with cation vacancies. Finally, In-Ag (or In-Cu) complexes are formed.