DEFECT-INDUCED EMISSION BAND IN CDTE

We report on a distinct correlation between the 1.47 eV emission band and the dislocation density in bulk CdTe. The 1.47 eV band intensifies around the high-dislocation area (lineage structure) and at the posit ion just on dislocation bundle. On the other hand, the 1.47 eV band wa s hardly observed in the low-dislocation area (etch pit density less t han 2 X 10(5) cm-2) or at the position away from the dislocation bundl e. Furthermore, the 1.47 eV band was intensified by gamma-ray irradiat ion of 1.7 X 10(7) Gy, which produced a great number of Frenkel defect s. It was shown that the 1.47 eV band is related not only to an extend ed defect such as a dislocation, but also to a point defect such as a Frenkel defect. These results suggest that the strain field induced in the vicinity of the defects is responsible for the recombination cent er of the 1.47 eV band.