SHALLOW IMPURITY-RELATED AND DEFECT-RELATED COMPLEXES IN UNDOPED ZNSECRYSTALS

The electronic structure of bound excitons involving native- as well a s point-defects is investigated by optical spectroscopy using highly c rystalline ZnSe samples grown by the Markov method. We demonstrate tha t the interactions of attendent single particles is responsible for th e splitting of the (D0, X) and (A0, X) states. From these splittings t he hole-hole interaction parameter gamma and the cubic crystal-field p arameter beta for the Li bound exciton complex has been determined una mbiguously for the first time. The I1d emission line shows a fine stru cture which is similar to the I1Li exciton line. I1d is therefore assi gned to an acceptor-bound exciton recombination with an associate form ed by a zinc vacancy and an impurity donor combined acting as an accep tor.