MOLECULAR-BEAM EPITAXY OF ZNSE DOPED WITH NITROGEN ON VICINAL (100)-ORIENTED AND (211)-ORIENTED GAAS SUBSTRATES

This paper presents the growth and characterization of N-doped ZnSe gr own on vicinal (100) and (211) GaAs substrates. The effects of the sur face steps on the formation of deep donors are investigated by compari ng PL properties and net-acceptor concentration of N-doped ZnSe epilay ers grown on the vicinal surfaces with those grown on the exact (100) surface. It is shown that the use of the vicinal substrate suppresses the generation of deep donors and enhances the net acceptor concentrat ion. The effects of the dangling bonds at Zn sites on the N-incorporat ion process are studied by comparing the net-acceptor concentration of N-doped ZnSe epilayers grown on the (211)A surface with that on the ( 211)B surface. it is found that the N incorporation is limited by the single dangling bond at the Zn sites.