INTEGRATED HETEROSTRUCTURE DEVICES COMPOSED OF II-VI MATERIALS WITH HG-BASED CONTACT LAYERS

Authors
REN J EASON DB CHURCHILL LE YU Z BONEY C COOK JW SCHETZINA JF ELMASRY NA
Citation
J. Ren et al., INTEGRATED HETEROSTRUCTURE DEVICES COMPOSED OF II-VI MATERIALS WITH HG-BASED CONTACT LAYERS, Journal of crystal growth, 138(1-4), 1994, pp. 455-463
Citations number
27
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
455 - 463
Database
ISI
SICI code
0022-0248(1994)138:1-4<455:IHDCOI>2.0.ZU;2-1
Abstract
Integrated heterostructure devices (IHDs) composed of II-VI materials in epitaxial multilayered structures for light-emitting diode and lase r diode applications are described. These IHDs combine a light emissio n multilayer structure with an abrupt or graded heterostructure which includes Hg-based materials for improved ohmic contact to the upper p- type layer of the light emitting structure.