THE GROWTH OF HGSE BY MOLECULAR-BEAM EPITAXY FOR OHMIC CONTACTS TO P-ZNSE

The structural properties of HgSe grown by molecular beam epitaxy (MBE ) are investigated for different lattice mismatches to the substrate a nd various growth conditions. The growth rate is shown to depend stron gly on the growth temperature above 100-degrees-C as well as on the Hg /Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness , especially for the growth on highly lattice mismatched substrates. C hanges in the surface morphology are related to growth parameters. Dif ferences between the electrical behavior of MBE-grown and bulk HgSe ar e discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.