PHOTOIONIZATION OF A DEEP CENTER IN ZINC SELENIDE GIVING INFORMATION ABOUT THE CONDUCTION-BAND STRUCTURE

Authors
ZHENG JZ ALLEN JW
Citation
Jz. Zheng et Jw. Allen, PHOTOIONIZATION OF A DEEP CENTER IN ZINC SELENIDE GIVING INFORMATION ABOUT THE CONDUCTION-BAND STRUCTURE, Journal of crystal growth, 138(1-4), 1994, pp. 504-507
Citations number
6
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
504 - 507
Database
ISI
SICI code
0022-0248(1994)138:1-4<504:POADCI>2.0.ZU;2-0
Abstract
Thermal emission from a deep level to the conduction band in zinc sele nide gives an apparent activation energy of 0.33 eV. The photoionizati on spectrum shows two thresholds, attributed to transitions from the l evel to the GAMMA and L valleys. An intervalley spacing of 1.26 +/- 0. 06 eV is deduced.