THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES

The structural properties of ZnSe-ZnS strained-layer superlattices (SL Ss) grown on GaAs (100) by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) were studied using high-resolution transmi ssion electron microscopy (HRTEM). The type and distribution of the de fects in ZnSe-ZnS SLS are related to the surface quality of GaAs subst rate, of the buffer layer and the thickness of each layer for ZnSe and ZnS in SLS. In this work we noticed that there are stacking faults (S Fs), mismatch defects (MDs) and microtwins (MTs) in ZnSe1-xSx buffer l ayer at interfacial steps due to the GaAs surface not being smooth, an d the dislocation can penetrate the ZnSe-ZnS SLS layer.