TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATIONS OF II-VI GAAS HETEROSTRUCTURES/

Authors
BROWN PD LOGINOV YY MULLINS JT DUROSE K BRINKMAN AW HUMPHREYS CJ
Citation
Pd. Brown et al., TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATIONS OF II-VI GAAS HETEROSTRUCTURES/, Journal of crystal growth, 138(1-4), 1994, pp. 538-544
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
538 - 544
Database
ISI
SICI code
0022-0248(1994)138:1-4<538:TEIOIG>2.0.ZU;2-9
Abstract
Defect microstructures within heteroepitaxial layers may be categorize d according to whether they arise due to problems at the epilayer/subs trate interface, are introduced during growth itself or are due to som e inherent materials problem. Examples taken from II-VI/GaAs systems s howing interface reaction, lattice relaxation, banding due to composit ional variations at the growth front and dimorphism are described.