A. Schulzgen et al., EXCITON DYNAMICS AND HIGH-DENSITY EFFECTS IN ZNSE ZNMNSE QUANTUM STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 138(1-4), 1994, pp. 575-579
ZnSe well exciton features in ZnSe/ZnMnSe quantum structures grown by
molecular beam epitaxy (MBE) are investigated using various spectrosco
pic techniques. Steady-state photoluminescence and excitation spectros
copy demonstrate an enhanced effective band offset due to tensile stra
in and a confinement induced shift of the excitonic resonances up to 1
00 meV. Progressive localization of excitons on the 10 ps time scale f
ollowed by rapid recombination within 100 ps is observed in time-resol
ved luminescence. Transient pump-probe measurements show clear nonline
ar excitonic absorption under 2 muJ/cm2 excitation with a recovery on
the same time scale as the radiative recombination.