ELECTRON-GAS SCREENING OF THE PIEZOELECTRIC FIELDS IN INDIUM-DOPED (211) CDTE CD1-XZNXTE QUANTUM-WELLS/

Indium donor doping of piezoelectric (211)B CdTe/Cd1-xZnxTe multiple q uantum wells by molecular beam epitaxy has been achieved. The effect o f uniform doping of the Cd1-xZnxTe barriers or delta-doping of the CdT e wells on the strain-induced piezoelectric fields in the wells was st udied using low temperature luminescence spectroscopy. Doping in the b arriers produces an electron-gas in the well which partially screens t he piezoelectric field. Screening is also observed for structures delt a-doped in the CdTe well, provided the indium plane is located so that the piezoelectric field separates the electrons from the donor cores.