PHOTOLUMINESCENCE OF ULTRATHIN ZNSE-ZNTE SUPERLATTICES

ZnSe-ZnTe superlattices were grown on GaAs (100) surfaces by molecular beam epitaxy without buffer layer. The thicknesses of ZnSe and ZnTe l ayers were varied from 5/4 to 9/4 monolayer (ML) and from 1/9 to 1 ML, respectively. The photoluminescence (PL) spectra due to isoelectronic traps of Te atoms and clusters are independent to the thickness of Zn Se layers. We can tune the photon energy of PL emission from about 2.6 5 to 2.35 eV under the thickness of ZnSe layers of 2 monolayers consta nt. The green emission was achieved at room temperature by the superst ructure with blue band layers sandwiched by ZnTe of 1 ML.