J. Petruzzello et al., IMPROVEMENT IN LASING CHARACTERISTICS OF II-VI BLUE-GREEN LASERS USING QUATERNARY AND TERNARY ALLOYS TO PRODUCED PSEUDOMORPHIC HETEROSTRUCTURES, Journal of crystal growth, 138(1-4), 1994, pp. 686-691
Pseudomorphic heterostructures with increased electrical and optical c
onfinement were used to improve II-VI blue-green laser operating chara
cteristics. These lasers employ Zn1-xMgxSySe1-y alloys for the claddin
g layers, ZnSySe1-y for the waveguiding layers and Zn1-zCdzSe quantum
wells for the active layer. The defect density through the active laye
r in such a heterostructure was found to range from less-than-or-equal
-to 4 X 10(6) to 6 x 10(8) cm-2 . The density found in the active laye
r is directly related to the growth of the quaternary alloy which is o
ften accompanied by a high density of stacking faults and threading di
slocations. By comparing lasers with varying defect densities a direct
correlation between the threshold current density and the structural
quality has been observed. The lasers with the lowest defect density h
ave threshold current densities of 400 A/cm2 (without facet coating) w
hich are the lowest reported for II-VI devices and comparable to state
-of-the-art III-V devices.