ADVANCES IN THE DEVELOPMENT OF GRADED INJECTOR VISIBLE-LIGHT EMITTERS

Novel visible light emitters with low turn-on voltages and efficient r oom temperature operation have been demonstrated in the n-CdSe/p-ZnTe heterojunction separated by a graded MgxCd1-xSe injecting region. The successful p-type doping of ZnTe up to 1 X 10(20) cm-3 using a nitroge n plasma source has allowed using higher quality GaSb substrates and g rowing of p-ZnTe epilayers. Diodes with ideality factors of 1.8 are re alized with turn-on voltages near that of the bandgap of ZnTe. This de viation from an ideality of 1 may be due to using too small a peak Mg concentration in the MgxCd1-xSe layer resulting in a barrier for elect ron injection and increasing recombination at the interface.