ELECTRICAL AND OPTICAL MODELING OF II-VI SEMICONDUCTOR DIODE-LASERS

The electrical and optical operation of ZnCdxSe1-x/ZnSe/ZnSySe1-y and Zn1-xCdxSe/ZnSySe1-y/Zn1-zMgzSuSe1-u quantum-well blue-green injection lasers were studied by numerical simulation. The physical model in th is study is based on the self-consistent solution of Poisson's equatio n, the current continuity equations, including the thermionic emission theory for carrier transport across heterojunctions, the photon rate equation and the scalar wave equation. The optical gain of strained qu antum well lasers was calculated using k.p theory based on the inter-b and electron-hole pair recombination. Good agreement was obtained betw een the experimental and the calculated Zn1-xCdxSe/ZnSySe1-y/Zn1-zMgzS uSe1-u laser characteristics, over a wide temperature range of 85 to 3 94 K, without including excitonic effects.