HELIUM GAS MIXING IN NITROGEN PLASMA FOR THE CONTROL OF THE ACCEPTOR CONCENTRATION IN P-ZNSE

Citation
M. Kobayashi et al., HELIUM GAS MIXING IN NITROGEN PLASMA FOR THE CONTROL OF THE ACCEPTOR CONCENTRATION IN P-ZNSE, Journal of crystal growth, 138(1-4), 1994, pp. 745-749
Citations number
9
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
745 - 749
Database
ISI
SICI code
0022-0248(1994)138:1-4<745:HGMINP>2.0.ZU;2-W
Abstract
Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 X 10(16) to 7 X 10(1 7) cm-3, whereas the acceptor concentration of p-ZnSSe can be controll ed from 4 X 10(16) to 4 X 10(17) cm-3 . Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mi xing ratio and the RF power. p-Layers grown with this technique were u sed for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.