M. Kobayashi et al., HELIUM GAS MIXING IN NITROGEN PLASMA FOR THE CONTROL OF THE ACCEPTOR CONCENTRATION IN P-ZNSE, Journal of crystal growth, 138(1-4), 1994, pp. 745-749
Nitrogen and helium mixed gas plasma was used to control the acceptor
concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor
concentration of p-ZnSe can be controlled from 6 X 10(16) to 7 X 10(1
7) cm-3, whereas the acceptor concentration of p-ZnSSe can be controll
ed from 4 X 10(16) to 4 X 10(17) cm-3 . Doping characteristics such as
the acceptor concentration and the PL properties depend on the gas mi
xing ratio and the RF power. p-Layers grown with this technique were u
sed for blue-green laser diode structures. Lasing was observed at 77 K
under pulsed operation.