INGAALP VISIBLE-LIGHT LASER-DIODES AND LIGHT-EMITTING-DIODES

In this paper, we review and discuss the critical problems involved in the research and development of InGaAlP visible light devices along w ith some of our achievements. High p-doping of a cladding layer, and a multi-quantum-barrier structure improved the temperature characterist ics of InGaAlP laser diodes. These techniques have made it possible to realize a high temperature CW operation above 70-degrees-C at the wav elength of 633 nm. New structure InGaAlP light-emitting diodes (LEDs) which employ an off-angle substrate and a Bragg reflector have improve d both quantum efficiency and light extraction efficiency. Candera-cla ss, high-brightness LEDs have been achieved for operation in the orang e to green color region.