STIMULATED-EMISSION OF II-VI EPITAXIAL LAYERS

Authors
KLINGSHIRN C KALT H UMLAUFF M PETRI W MAJUMDER FA BOGDANOV SV LANGBEIN W GRUN M HETTERICH M GEYZERS KP HEUKEN M NAUMOV A STANZL H GEBHARDT W
Citation
C. Klingshirn et al., STIMULATED-EMISSION OF II-VI EPITAXIAL LAYERS, Journal of crystal growth, 138(1-4), 1994, pp. 786-790
Citations number
25
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
786 - 790
Database
ISI
SICI code
0022-0248(1994)138:1-4<786:SOIEL>2.0.ZU;2-K
Abstract
After a short review of the typical gain processes in II-VI semiconduc tors, we present examples for various compounds considering rather thi ck epilayers and superlattices. The observed gain processes include in elastic scattering processes, biexcitons and plasma formation.