NONLINEAR QUANTUM BEAT SPECTROSCOPY OF BOUND BIEXCITONS IN II-VI SEMICONDUCTORS

Authors
ERLAND J RAZBIRIN BS LYSSENKO VG PANTKE KH HVAM JM
Citation
J. Erland et al., NONLINEAR QUANTUM BEAT SPECTROSCOPY OF BOUND BIEXCITONS IN II-VI SEMICONDUCTORS, Journal of crystal growth, 138(1-4), 1994, pp. 800-804
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
800 - 804
Database
ISI
SICI code
0022-0248(1994)138:1-4<800:NQBSOB>2.0.ZU;2-Y
Abstract
With the technique of nonlinear quantum beat spectroscopy (NQBS), base d on time-integrated, spectrally resolved four-wave mixing, the nonlin earities of biexcitons localized at neutral acceptor sites in CdSe are investigated. The NQBS offers the possibility to distinguish between quantum beats from a three-level system and polarization interference from independent two-level systems. The localized biexciton states are discussed in analogy with excited states of holes in neutral donor co mplexes.