TIME-RESOLVED DONOR-ACCEPTOR PAIR RECOMBINATION LUMINESCENCE IN HIGHLY N-DOPED AND P-DOPED II-VI SEMICONDUCTORS

Time resolved luminescence measurements of the donor-acceptor pair (DA P) luminescence of n-doped CdS: In bulk crystals, undoped bulk ZnSe cr ystals grown with various VI/Il ratios, and p-doped ZnSe: N epilayers in the near band gap region are presented. The decay of the donor-acce ptor pair recombination luminescence is investigated for dopant concen trations below the Mott density. A discussion on the basis of a statis tical theory by Thomas and Hopfield for DAP recombination yields, by k nowledge of the Bohr radii of the impurities, the number of electronic ally active impurity centres. The reliability of this method to determ ine impurity concentrations is discussed.