PHOTOINDUCED SCREENING OF THE EXCITONIC INTERACTION IN ZNSE-ZNTE TYPE-II STRAINED-LAYER SUPERLATTICES

Authors
GIL B CLOITRE T BRIOT N BRIOT O BORING P AULOMBARD RL
Citation
B. Gil et al., PHOTOINDUCED SCREENING OF THE EXCITONIC INTERACTION IN ZNSE-ZNTE TYPE-II STRAINED-LAYER SUPERLATTICES, Journal of crystal growth, 138(1-4), 1994, pp. 868-872
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
138
Issue
1-4
Year of publication
1994
Pages
868 - 872
Database
ISI
SICI code
0022-0248(1994)138:1-4<868:PSOTEI>2.0.ZU;2-A
Abstract
We report the observation of nonlinear optical properties of ZnSe-ZnTe superlattices under photo-injected carriers, at pumped liquid helium temperature. Identification of several transitions measured by transmi ssion on samples grown by metalorganic vapour phase epitaxy and etched away from the GaAs substrate is made in the context of the envelope f unction approach. This reveals that the conduction to valence band lin e-ups are type II in these samples. This situation is invoked in order to interpret the efficiency of the exciton screening.