HGTE AND HG1-XCDXTE VAPOR-PHASE EPITAXIAL-GROWTH UNDER CONTROLLED HG PRESSURE

We tried to make the epitaxial growth of HgTe and Hg1-xCdxTe films on CdTe substrates from the vapor phase under controlled mercury pressure in a sealed reaction chamber. As a reaction chamber, a horizontal qua rtz tube with 3 cm diameter and 30 cm length was used. The temperature ranges of substrate and HgTe source were 200-250 and 300-350-degrees- C, respectively. The mercury pressure employed was 0.1-10 Torr. HgTe a nd Hg1-xCdxTe were successfully grown. A growth rate of 1-4 angstrom/s was obtained for HgTe film, but the rate depends severely on source a nd substrate temperatures and Hg pressure.