EFFECT OF LATTICE-MISMATCHED GROWTH ON INAS ALSB RESONANT-TUNNELING DIODES/

Authors
BROWN ER EGLASH SJ TURNER GW PARKER CD PANTANO JV CALAWA DR
Citation
Er. Brown et al., EFFECT OF LATTICE-MISMATCHED GROWTH ON INAS ALSB RESONANT-TUNNELING DIODES/, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 879-882
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
6
Year of publication
1994
Pages
879 - 882
Database
ISI
SICI code
0018-9383(1994)41:6<879:EOLGOI>2.0.ZU;2-E
Abstract
Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations o n the resonant-tunneling process. Although the diode on the GaAs subst rate had a much higher dislocation density, as evidenced by x-ray diff raction measurements, it displayed only a small decrease in peak-to-va lley current ratio.