ELECTRON-TRANSPORT PROPERTIES OF GA0.51IN0.49P FOR DEVICE APPLICATIONS

Authors
BESIKCI C RAZEGHI M
Citation
C. Besikci et M. Razeghi, ELECTRON-TRANSPORT PROPERTIES OF GA0.51IN0.49P FOR DEVICE APPLICATIONS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 1066-1069
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
6
Year of publication
1994
Pages
1066 - 1069
Database
ISI
SICI code
0018-9383(1994)41:6<1066:EPOGFD>2.0.ZU;2-3
Abstract
We present Monte Carlo calculations of steady-state and transient elec tron transport properties of Ga0.51In0.49P. We have made a simulation- based comparison between Ga0.51In0.49P and AlxGa1-xAs (x = 0.2, 0.3). Our Monte Carlo data show that transport properties of Ga0.51In0.49P a re favorable, and when the other advantages of the GaInP/GaAs system a re also taken into account. this material is a good choice to replace AlxGa1-xAs (x greater-than-or-equal-to 0.3). We have also calculated e lectron drift and Hall mobilities in Ga0.51In0.49P as a function of im purity concentration and temperature, and determined the effects of di fferent scattering mechanisms on the low-field mobility. Calculated re sults are in good agreement with the measurements on metal organic che mical vapor deposition (MOCVD) grown samples with Hall mobilities with in a factor of 0.5 of the calculated theoretical limit. It has also be en found that alloy scattering is an important mobility degrading mech anism in lightly doped material at low temperatures.