NOISE TEMPERATURE MODELING OF ALGAAS GAAS AND ALGAAS/INGAAS/GAAS HEMTS/

Authors
ANWAR AFM LIU KW
Citation
Afm. Anwar et Kw. Liu, NOISE TEMPERATURE MODELING OF ALGAAS GAAS AND ALGAAS/INGAAS/GAAS HEMTS/, Solid-state electronics, 37(9), 1994, pp. 1585-1588
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
9
Year of publication
1994
Pages
1585 - 1588
Database
ISI
SICI code
0038-1101(1994)37:9<1585:NTMOAG>2.0.ZU;2-G
Abstract
An accurate modeling of noise temperature for AlGaAs/GaAs HEMTs and Al GaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The analys is is based on a self-consistent solution of Schrodinger and Poisson's equations. Pseudomorphic HEMTs have a lower noise temperature as comp ared to normal AlGaAs/GaAs HEMTs. The minimum noise temperature in pse udomorphic HEMTs decreases with increasing quantum-well (QW) width. No ise temperature in general increases with increasing gate length.