SILICON K(A) BAND LOW-NOISE BARITT DIODES FOR RADAR SYSTEM APPLICATIONS GROWN BY MBE

Authors
PRESTING H LUY JF SCHAFFLER F PUCHINGER J
Citation
H. Presting et al., SILICON K(A) BAND LOW-NOISE BARITT DIODES FOR RADAR SYSTEM APPLICATIONS GROWN BY MBE, Solid-state electronics, 37(9), 1994, pp. 1599-1601
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
9
Year of publication
1994
Pages
1599 - 1601
Database
ISI
SICI code
0038-1101(1994)37:9<1599:SKBLBD>2.0.ZU;2-M
Abstract
Silicon K(a) band BARITT (Barrier Injection Transit Time) diodes in th e frequency regime from 26 to 31 GHz have been grown by MBE with a p-n -p doping sequence. CW powers of 4 mW at 29 GHz have been realized fro m fabricated mesa diodes with diameters of empty set = 55 to 65 mum, t he diodes exhibited a signal to noise ratio of SI(NDELTAF ) = 93 dBc/H z (DELTAf = 100 kHz).