COMPARISON OF TERMINATION METHODS FOR LOW-VOLTAGE, VERTICAL INTEGRATED POWER DEVICES

The design issues associated with termination structures for low-volta ge (200 V class), vertical, integrated power devices are described and contrasted with common design guidelines for high-voltage devices. A comparison of single field plate, two-level field plate, field ring, a nd field plate/field ring methods is presented. Performance criteria a re breakdown voltage, manufacturability, oxide charge sensitivity, and area consumption. The combination field plate/field ring method is su perior to the other methods unless extremely low area consumption is r equired. Extensive device simulations as well as experimental data con firm these conclusions.