FOWLER-NORDHEIM EMISSION AND ELECTRON TRAPPING IN PURE N2O SIH(4) PECVD OXIDE DEPOSITED ON N-2, H-2 AND O-2 PLASMA PRECLEANED SI WAFERS/

Authors
UPADHYAY HN CHANANA RK DWIVEDI R SRIVASTAVA SK
Citation
Hn. Upadhyay et al., FOWLER-NORDHEIM EMISSION AND ELECTRON TRAPPING IN PURE N2O SIH(4) PECVD OXIDE DEPOSITED ON N-2, H-2 AND O-2 PLASMA PRECLEANED SI WAFERS/, Solid-state electronics, 37(9), 1994, pp. 1671-1672
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
9
Year of publication
1994
Pages
1671 - 1672
Database
ISI
SICI code
0038-1101(1994)37:9<1671:FEAETI>2.0.ZU;2-I