DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION

Authors
LIE DYC VANTOMME A EISEN F VREELAND T NICOLET MA CARNS TK WANG KL HOLLANDER B
Citation
Dyc. Lie et al., DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION, Journal of electronic materials, 23(4), 1994, pp. 369-373
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
4
Year of publication
1994
Pages
369 - 373
Database
ISI
SICI code
0361-5235(1994)23:4<369:DASIPV>2.0.ZU;2-E
Abstract
We compare both the strain and damage that 100 keV Si irradiation at r oom temperature introduces in pseudomorphic and relaxed GexSi1-x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1 -x interface is not significantly damaged. The amount of damage produc ed in pseudomorphic and relaxed GexSi1-x layers of similar x for irrad iation doses up to 2.5 x 10(14) Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiati on-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations a re discussed.