COPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANE

Copper chemical vapor deposition using Cu-hexafluoroacetylacetonate (h fac) trimethylvinylsilane (TMVS) as precursor was performed in a cold- wall low pressure chemical vapor deposition (CVD) reactor. The design and operation of the reactor are described. Copper deposition on therm al SiO2, W, and CoSi2 substrate surfaces was investigated over the tem perature range of 160-300-degrees-C and pressure range of 10-1000 mTor r. The activation energies of Cu CVD were determined to be 13.33 and 1 1.54 kcal/mole for the W and CoSi2 substrates, respectively. The depen dence of film resistivity, grain size, and growth rate on deposition p ressure and temperature were also investigated. The film uniformity wa s found to be better than ten percent over a 4-inch diameter substrate . Experimental results also show that selective deposition can be achi eved at a pressure of 10 mTorr within the temperature range of 160-200 -degrees-C. In addition, hydrofluoric acid dipping was found to modify the SiO2 surface and influence the copper deposition on it.