Br. Bennett et al., ORIGIN OF OPTICAL ANISOTROPY IN STRAINED INXGA1-XAS INP AND INYAL1-YAS/INP HETEROSTRUCTURES/, Journal of electronic materials, 23(4), 1994, pp. 423-429
Optical anisotropy in mismatched InxGa1-xAs/InP and InyAl1-yAs/InP het
erostructures has been investigated by variable azimuthal angle ellips
ometry and reflectance difference spectroscopy. The two approaches are
shown to yield strongly correlated results. A comparison to high reso
lution x-ray diffraction, transmission electron microscopy, and atomic
force microscopy studies indicates that large optical anisotropies ar
e associated with surface roughening that results from three-dimension
al growth. Our findings demonstrate that fast and nondestructive measu
rements of optical anisotropy can provide important information about
the growth mode and crystalline quality of strained epitaxial layers.