SELECTIVELY EMBEDDED GROWTH BY CHEMICAL BEAM EPITAXY FOR THE FABRICATION OF INGAAS INP DOUBLE-HETEROSTRUCTURE LASERS/

In order to fabricate InGaAs/InP double-heterostructure (DH) lasers, a novel selectively embedded one-step growth by chemical beam epitaxy ( CBE) was adopted. Before the selective CBE growth, 6-8 mum wide channe ls on an n-InP substrate were undercut by wet chemical etching through a 170 nm thick SiO2 film mask. A 6 mum wide stripe-geometry DH laser structure with an active layer of 0.14 mum thickness was grown selecti vely with good planarity into the channels and operated by a pulse.