HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE

Authors
CHEN SD LIN L HE XZ XU ZY LUO CP XU JZ
Citation
Sd. Chen et al., HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE, Journal of crystal growth, 140(3-4), 1994, pp. 287-290
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
140
Issue
3-4
Year of publication
1994
Pages
287 - 290
Database
ISI
SICI code
0022-0248(1994)140:3-4<287:HPSO(C>2.0.ZU;2-1
Abstract
Sharp and rich photoluminescence lines accociated with free exciton (F E), excitons bound to neutral acceptors (A0X) and donors (D0X) in mole cular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been re ported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal pe rfection as those grown on lattice-matched substrates.