PYROLYSIS CHARACTERISTICS OF IODINE PRECURSORS FOR GAS-SOURCE N-TYPE DOPING OF II-VI COMPOUNDS

Authors
RAJAVEL D CONTE A SUMMERS CJ
Citation
D. Rajavel et al., PYROLYSIS CHARACTERISTICS OF IODINE PRECURSORS FOR GAS-SOURCE N-TYPE DOPING OF II-VI COMPOUNDS, Journal of crystal growth, 140(3-4), 1994, pp. 327-335
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
140
Issue
3-4
Year of publication
1994
Pages
327 - 335
Database
ISI
SICI code
0022-0248(1994)140:3-4<327:PCOIPF>2.0.ZU;2-#
Abstract
The selection criteria and pyrolysis characteristics of iodine precurs ors were investigated to determine the best compounds for the n-type d oping of CdTe during gas source molecular beam epitaxy. Ethyliodide an d allyliodide were found to have the most suitable properties and to p roduce iodine dimers for pyrolysis temperatures above 650 and 600-degr ees-C, respectively. The ethyliodide doping of CdTe was studied and pr oduced highly conductive CdTe layers with room temperature electron co ncentrations as high as 3 X 10(18) cm-3 with a mobility of approximate ly 460 cm2/V . s.