ANALYSIS OF THE FORMATION OF BATIO3 ISLAND DEPOSITED ON (111) INSB BYMETALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE

Islands of BaTiO3 in a thin film deposited on a (111) InSb substrate b y metalorganic chemical vapor deposition at a temperature of 300-degre es-C were investigated. Refractive index measured by ellipsometer usin g a He-Ne laser was 1.95, which is nearly the same value as that of am orphous BaTiO3 with microcrystals. X-ray diffraction peaks showed the deposit to be mostly amorphous and partly crystalline having the [110] BaTiO3 direction normal to the (111) InSb. Transmission electron micro scopy results showed that partially epitaxial BaTiO3 islands with peri odic misfit dislocations had been formed at the interface between amor phous BaTiO3 thin layer and the (111) InSb substrate. These BaTiO3 isl ands on the (111) InSb substrate formed at a low growth temperature we re three-dimensional nuclei which were closely associated with surface irregularities of the (111) InSb substrate.