Ys. Yoon et al., ANALYSIS OF THE FORMATION OF BATIO3 ISLAND DEPOSITED ON (111) INSB BYMETALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE, Journal of crystal growth, 140(3-4), 1994, pp. 355-360
Islands of BaTiO3 in a thin film deposited on a (111) InSb substrate b
y metalorganic chemical vapor deposition at a temperature of 300-degre
es-C were investigated. Refractive index measured by ellipsometer usin
g a He-Ne laser was 1.95, which is nearly the same value as that of am
orphous BaTiO3 with microcrystals. X-ray diffraction peaks showed the
deposit to be mostly amorphous and partly crystalline having the [110]
BaTiO3 direction normal to the (111) InSb. Transmission electron micro
scopy results showed that partially epitaxial BaTiO3 islands with peri
odic misfit dislocations had been formed at the interface between amor
phous BaTiO3 thin layer and the (111) InSb substrate. These BaTiO3 isl
ands on the (111) InSb substrate formed at a low growth temperature we
re three-dimensional nuclei which were closely associated with surface
irregularities of the (111) InSb substrate.