INFLUENCE OF A HIGH VERTICAL MAGNETIC-FIELD ON TE DOPANT SEGREGATION IN INSB GROWN BY THE VERTICAL GRADIENT FREEZE METHOD

Citation
J. Kang et al., INFLUENCE OF A HIGH VERTICAL MAGNETIC-FIELD ON TE DOPANT SEGREGATION IN INSB GROWN BY THE VERTICAL GRADIENT FREEZE METHOD, Journal of crystal growth, 140(3-4), 1994, pp. 435-438
Citations number
10
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
140
Issue
3-4
Year of publication
1994
Pages
435 - 438
Database
ISI
SICI code
0022-0248(1994)140:3-4<435:IOAHVM>2.0.ZU;2-W
Abstract
A vertical gradient freeze apparatus was set up to investigate the inf luence of a vertical magnetic field on Te dopant segregation in InSb. Te-doped InSb crystals were grown in the presence and absence of an 80 .0 kG magnetic field. The axial profile of the Te concentration in the crystal grown in the magnetic field was observed to be more uniform t han that grown without magnetic field, which was attributed to the inf luence of the high magnetic field on Te dopant segregation by reducing convection in the melt.