Pt. Vianco et al., INTERMETALLIC COMPOUND LAYER FORMATION BETWEEN COPPER AND HOT-DIPPED 100IN, 50IN-50SN, 100SN, AND 63SN-37PB COATINGS, Journal of electronic materials, 23(7), 1994, pp. 583-594
The growth kinetics of intermetallic compound layers formed between fo
ur hot-dipped solder coatings and copper by solid state, thermal aging
were examined. The solders were 100Sn, 50In-50Sn, 100In, and 63Sn-37P
b (wt.%); the substrate material was oxygen-free, high conductivity Cu
. The total intermetallic layer of the 100Sn/Cu system exhibited a com
bination of parabolic growth at lower aging temperatures and t0.42 gro
wth at the higher temperatures. The combined apparent activation energ
y was 66 kJ/mol. These results are compared to the total layer growth
observed with the 63Sn-37Pb/Cu system which showed parabolic kinetics
at similar temperatures and an apparent activation energy of 45 kJ/mol
. Both 100Sn and 63Sn-37Pb diffusion couples showed a composite interm
etallic layer comprised of Cu3Sn and Cu6Sn5. The intermetallic compoun
d layer formed between In and Cu changed from a CuIn2 stoichiometry at
short annealing times to a Cu57In43 composition at longer periods. Th
e growth kinetics were parabolic with an apparent activation energy of
20 kJ/mol. The intermetallic layer growth of the 50In-50Sn/Cu system
exhibited extreme variations in the layer thicknesses which prohibited
a quantitative assessment of the growth kinetics. The layer was compr
ised of two compounds: Cu26Sn13In8 which was the dominant phase and a
thin layer of Cu17Sn9In24 adjacent to the solder.