A NOVEL TECHNOLOGY FOR A-SI TFT-LCDS WITH BURIED ITO ELECTRODE STRUCTURE

Authors
KAWACHI G KIMURA E WAKUI Y KONISHI N YAMAMOTO H MATSUKAWA Y SASANO A
Citation
G. Kawachi et al., A NOVEL TECHNOLOGY FOR A-SI TFT-LCDS WITH BURIED ITO ELECTRODE STRUCTURE, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1120-1124
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
7
Year of publication
1994
Pages
1120 - 1124
Database
ISI
SICI code
0018-9383(1994)41:7<1120:ANTFAT>2.0.ZU;2-J
Abstract
A novel process technology for a-Si TFT-LCD's with the buried ITO elec trode (BI) structure was developed and applied to 10-in-diagonal LCD p anels. By employing the BI structure, an aperture ratio of 29% was ach ieved in high resolution panels with a pixel size of 192 mu and the pi xel defect density was reduced to about one third of the conventional structure. The defect reduction effect of the BI structure was also co nfirmed theoretically. The BI structure provides significant advantage s for high-performance TFT-LCD's.